Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11979587Application Date: 2007-11-06
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Publication No.: US07655513B2Publication Date: 2010-02-02
- Inventor: Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
- Applicant: Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2001-097226 20010329; JP2001-133220 20010427; JP2001-296087 20010927
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/44
Abstract:
After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.
Public/Granted literature
- US20080138963A1 Method of manufacturing a semiconductor device Public/Granted day:2008-06-12
Information query
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