Spin polarization amplifying transistor

Invention Grant

US07655517B2 Spin polarization amplifying transistor 失效

Title translation: 旋转偏振放大晶体管

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Patent Title: Spin polarization amplifying transistor
Patent Title (中): 旋转偏振放大晶体管
Application No.: US11387223

Application Date: 2006-03-22
Publication No.: US07655517B2

Publication Date: 2010-02-02
Inventor: Dmitri E. Nikonov , George I. Bourianoff
Applicant: Dmitri E. Nikonov , George I. Bourianoff
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Blakely, Sokoloff, Taylor & Zafman LLP
Main IPC: H01L21/8238
IPC: H01L21/8238

Abstract:

An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.

Abstract(Chinese):

本发明的一个实施例是部分由具有足够高的铁磁转变温度的铁磁半导体形成的晶体管，以相干地放大电流的自旋极化。例如，注入的非极化控制电流在晶体管基极内产生铁磁条件，使小的自旋极化信号电流产生较大输出电流的自发磁化。

Public/Granted literature

US20060186444A1 Spin polarization amplifying transistor Public/Granted day:2006-08-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS