Invention Grant
- Patent Title: On-chip bypass capacitor and method of manufacturing the same
- Patent Title (中): 片上旁路电容及其制造方法
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Application No.: US11636453Application Date: 2006-12-11
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Publication No.: US07655518B2Publication Date: 2010-02-02
- Inventor: DaeHwan Kim , JungHwa Lee
- Applicant: DaeHwan Kim , JungHwa Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR2003-0066397 20030923
- Main IPC: H01L21/8242
- IPC: H01L21/8242

Abstract:
An on-chip bypass capacitor and method of manufacturing the same, the on-chip bypass capacitor including at least two capacitor arrays, each capacitor array including a first layer connecting the at least two capacitor arrays in series, each capacitor array including a plurality of capacitors, each of the plurality of capacitors including a second layer connecting the plurality of capacitors in parallel. The on-chip bypass capacitor may be part of a chip which also includes a memory cell array including at least one cell capacitor.
Public/Granted literature
- US20070079488A1 On-chip bypass capacitor and method of manufacturing the same Public/Granted day:2007-04-12
Information query
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