Invention Grant
US07655519B2 Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode
有权
在下电极中制造具有化学阻挡层的金属 - 绝缘体 - 金属电容器的方法
- Patent Title: Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode
- Patent Title (中): 在下电极中制造具有化学阻挡层的金属 - 绝缘体 - 金属电容器的方法
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Application No.: US11216639Application Date: 2005-09-01
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Publication No.: US07655519B2Publication Date: 2010-02-02
- Inventor: Eun-ae Chung , Jae-hyoung Choi , Jung-hee Chung , Young-sun Kim , Cha-young Yoo
- Applicant: Eun-ae Chung , Jae-hyoung Choi , Jung-hee Chung , Young-sun Kim , Cha-young Yoo
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2004-0099058 20041130
- Main IPC: H01L21/8242
- IPC: H01L21/8242

Abstract:
A metal-insulator-metal (MIM) capacitor includes a lower electrode, a dielectric layer, and an upper electrode. The lower electrode includes a first conductive layer, a chemical barrier layer on the first conductive layer, and a second conductive layer on the chemical barrier layer. The chemical barrier layer is between the first and second conductive layers and is a different material than the first and second conductive layers. The dielectric layer is on the lower electrode. The upper electrode is on the dielectric layer opposite to the lower electrode. The first and second conductive layers can have the same thickness. The chemical barrier layer can be thinner than each of the first and second conductive layers. Related methods are discussed.
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