Invention Grant
- Patent Title: Semiconductor element and process of manufacturing semiconductor element
- Patent Title (中): 半导体元件及制造半导体元件的工艺
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Application No.: US11557387Application Date: 2006-11-07
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Publication No.: US07655527B2Publication Date: 2010-02-02
- Inventor: Hans-Hinnerk Steckhan
- Applicant: Hans-Hinnerk Steckhan
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8222

Abstract:
Shown are embodiments where a process of manufacturing a semiconductor element on a semiconductor wafer is shown. The semiconductor element is obtained by dividing the function-providing semiconductor wafer into functional elements. The function-providing semiconductor wafer is, at its first main surface, mechanically coupled to a handling wafer. The thinning is carried out in the coupled state of the function-providing semiconductor wafer, and the function-providing semiconductor wafer is divided in its state coupled to the handling wafer. During or after connecting the semiconductor element to a lead frame the mechanical coupling between the semiconductor element and the corresponding part of the handling wafer is destroyed. Other embodiments are also shown.
Public/Granted literature
- US20080105956A1 SEMICONDUCTOR ELEMENT AND PROCESS OF MANUFACTURING SEMICONDUCTOR ELEMENT Public/Granted day:2008-05-08
Information query
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