Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US10588959Application Date: 2005-01-17
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Publication No.: US07655528B2Publication Date: 2010-02-02
- Inventor: Satoshi Eguchi , Akira Kanai , Isao Miyashita , Seigo Nagashima
- Applicant: Satoshi Eguchi , Akira Kanai , Isao Miyashita , Seigo Nagashima
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2004-032886 20040210
- International Application: PCT/JP2005/000473 WO 20050117
- International Announcement: WO2005/076326 WO 20050818
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
SiH3CH3 having the concentration of 1 to 10% is diluted with H2 and a portion of the diluted SiH3CH3, GeH4 and SiH4 (or DCS) are respectively supplied to a chamber of an epitaxial device at predetermined flow rates, and SiGe:C is formed by an epitaxial growth technique. By diluting the SiH3CH3, the concentration of oxygen-based impurity contained in the SiH3CH3 is reduced and hence, the oxygen-based impurity which is supplied to a chamber are reduced whereby the concentration of oxygen-based impurity contained in the SiGe:C formed in a film is reduced.
Public/Granted literature
- US20070275516A1 Manufacturing Method of Semiconductor Device Public/Granted day:2007-11-29
Information query
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