Invention Grant
US07655529B1 InP based heterojunction bipolar transistors with emitter-up and emitter-down profiles on a common wafer
失效
基于InP的异质结双极型晶体管，在共同的晶圆上具有发射极上升和发射 - 下降曲线
- Patent Title: InP based heterojunction bipolar transistors with emitter-up and emitter-down profiles on a common wafer
- Patent Title (中): 基于InP的异质结双极型晶体管，在共同的晶圆上具有发射极上升和发射 - 下降曲线
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Application No.: US11052935Application Date: 2005-02-07
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Publication No.: US07655529B1Publication Date: 2010-02-02
- Inventor: Mary Chen , Marko Sokolich
- Applicant: Mary Chen , Marko Sokolich
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
A wafer comprising at least one emitter-up Heterojunction Bipolar Transistor (HBT) and at least one emitter-down HBT on a common InP based semiconductor wafer. Isolation and N-type implants into the device layers differentiate an emitter-down HBT from an emitter-up HBT. The method for preparing a device comprises forming identical layers for all HBTs and performing ion implantation to differentiate an emitter-down HBT from an emitter-up HBT.
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