Methods of forming flash devices with shared word lines

Invention Grant

US07655536B2 Methods of forming flash devices with shared word lines 有权

Title translation: 用共享字线形成闪存设备的方法

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Patent Title: Methods of forming flash devices with shared word lines
Patent Title (中): 用共享字线形成闪存设备的方法
Application No.: US11316474

Application Date: 2005-12-21
Publication No.: US07655536B2

Publication Date: 2010-02-02
Inventor: Masaaki Higashitani
Applicant: Masaaki Higashitani
Applicant Address: US CA Milpitas
Assignee: SanDisk Corporation
Current Assignee: SanDisk Corporation
Current Assignee Address: US CA Milpitas
Agency: Vierra Magen Marcus & DeNiro LLP
Main IPC: H01L21/76
IPC: H01L21/76

Methods of forming flash devices with shared word lines

Abstract:

Word lines of a NAND flash memory array are formed by concentric, rectangular shaped, closed loops that have a width of approximately half the minimum feature size of the patterning process used. The resulting circuits have word lines linked together so that peripheral circuits are shared. Separate erase blocks are established by shield plates.

Abstract(Chinese):

NAND闪速存储器阵列的字线由同心的矩形形状的闭环形成，其具有大约是所使用的图案化工艺的最小特征尺寸的一半的宽度。所得到的电路具有连接在一起的字线，使得外围电路被共享。单独的擦除块由屏蔽板建立。

Public/Granted literature

US20070141780A1 Methods of forming flash devices with shared word lines Public/Granted day:2007-06-21

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作