Invention Grant
- Patent Title: Control of poly-Si depletion in CMOS via gas phase doping
- Patent Title (中): 通过气相掺杂控制CMOS中的多晶硅耗尽
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Application No.: US12127171Application Date: 2008-05-27
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Publication No.: US07655551B2Publication Date: 2010-02-02
- Inventor: Yaocheng Liu , Alexander Reznicek , Devendra K. Sadana
- Applicant: Yaocheng Liu , Alexander Reznicek , Devendra K. Sadana
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763
Abstract:
A method to control the poly-Si depletion effect in CMOS structures utilizing a gas phase doping process which is capable of providing a high concentration of dopant atoms at the gate dielectric/poly-Si interface is provided. The present invention also provides CMOS structure including, for example, nFETs and/or pFETs, that are fabricated utilizing the gas phase doping technique described herein.
Public/Granted literature
- US20080217697A1 CONTROL OF POLY-Si DEPLETION IN CMOS VIA GAS PHASE DOPING Public/Granted day:2008-09-11
Information query
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