Invention Grant
- Patent Title: Method and system for determining semiconductor characteristics
- Patent Title (中): 确定半导体特性的方法和系统
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Application No.: US11508591Application Date: 2006-08-22
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Publication No.: US07655558B2Publication Date: 2010-02-02
- Inventor: Li Xu
- Applicant: Li Xu
- Applicant Address: CN
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN
- Agency: Townsend and Townsend and Crew LLP
- Priority: CN200610029292 20060721
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; H01L21/4763 ; H01L21/311

Abstract:
Method and system for determining semiconductor characteristics. In a specific embodiment, the present invention provides a method for determining one or more characteristics of a partially processed integrated circuit. The method includes a step for providing a substrate material. The method further includes a step for forming at least one opening within the substrate material. The opening can be characterized by an opening characteristic that includes a depth and an opening width associated with an unknown volume. The method includes a step for providing fill material. Additionally, the method includes a step for processing the fill material to cause a first portion of the fill material to enter the opening and occupy an entirety of the unknown volume associated with the opening characteristic while a second portion of the fill material remains outside of the unknown volume. Moreover, the method includes a step for processing the second portion of the fill material using one or more processes to determine a spatial characteristic associated with the unknown volume.
Public/Granted literature
- US20080020526A1 Method and system for determining semiconductor characteristics Public/Granted day:2008-01-24
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