Method for preventing the formation of dentrites in a semiconductor

Invention Grant

US07655563B2 Method for preventing the formation of dentrites in a semiconductor 有权

Title translation: 防止在半导体中形成牙质的方法

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Patent Title: Method for preventing the formation of dentrites in a semiconductor
Patent Title (中): 防止在半导体中形成牙质的方法
Application No.: US11963373

Application Date: 2007-12-21
Publication No.: US07655563B2

Publication Date: 2010-02-02
Inventor: Gabriela Brase , Martin Ostermayr , Erwin Ruderer
Applicant: Gabriela Brase , Martin Ostermayr , Erwin Ruderer
Applicant Address: DE Munich
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Munich
Agency: Brinks Hofer Gilson & Lione
Main IPC: H01L21/4763
IPC: H01L21/4763

Method for preventing the formation of dentrites in a semiconductor

Abstract:

The invention relates to a semiconductor circuit arrangement having a semiconductor substrate, a first doping region, a second doping region, a connection doping region, an insulation layer and an electrically conductive structure which is to be planarized, it being possible for the charge carriers formed during a planarization step to be reliably dissipated, and for dendrite formation to be prevented, by a discharge doping region formed in the first and second doping regions.

Abstract(Chinese):

本发明涉及具有半导体衬底，第一掺杂区，第二掺杂区，连接掺杂区，绝缘层和待平坦化的导电结构的半导体电路装置，形成的电荷载体是可能的在通过形成在第一和第二掺杂区域中的放电掺杂区域的平坦化步骤期间被可靠地耗散并且用于防止枝晶形成。

Public/Granted literature

US20080124905A1 Solid-State Circuit Assembly Public/Granted day:2008-05-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）