Invention Grant
- Patent Title: Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program and computer storage medium
- Patent Title (中): 半导体器件制造方法，半导体器件制造装置，控制程序和计算机存储介质
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Application No.: US11551495Application Date: 2006-10-20
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Publication No.: US07655572B2Publication Date: 2010-02-02
- Inventor: Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
- Applicant: Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Tokyo Electron Limited,Zeon Corporation
- Current Assignee: Tokyo Electron Limited,Zeon Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPP2005-308363 20051024
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.
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