Invention Grant
- Patent Title: Method of modifying insulating film
- Patent Title (中): 绝缘膜改性方法
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Application No.: US11289330Application Date: 2005-11-30
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Publication No.: US07655574B2Publication Date: 2010-02-02
- Inventor: Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
- Applicant: Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-154812 20030530
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
Public/Granted literature
- US20060199398A1 Method of modifying insulating film Public/Granted day:2006-09-07
Information query
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