Invention Grant
- Patent Title: Method of forming silicon-containing insulation film having low dielectric constant and low film stress
- Patent Title (中): 形成具有低介电常数和低膜应力的含硅绝缘膜的方法
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Application No.: US11550930Application Date: 2006-10-19
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Publication No.: US07655577B2Publication Date: 2010-02-02
- Inventor: Yasuyoshi Hyodo , Nobuo Matsuki , Masashi Yamaguchi , Atsuki Fukazawa , Naoki Ohara , Yijun Liu
- Applicant: Yasuyoshi Hyodo , Nobuo Matsuki , Masashi Yamaguchi , Atsuki Fukazawa , Naoki Ohara , Yijun Liu
- Applicant Address: JP Tokyo
- Assignee: ASM Japan K.K.
- Current Assignee: ASM Japan K.K.
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.
Public/Granted literature
- US20070111540A1 METHOD OF FORMING SILICON-CONTAINING INSULATION FILM HAVING LOW DIELECTRIC CONSTANT AND LOW FILM STRESS Public/Granted day:2007-05-17
Information query
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