An inspection and measurement method and apparatus for semiconductor devices and patterns such as photomasks using an electron beam capable of measuring the potential of a sample with higher precision than conventional systems. When an S curve is observed in a semiconductor device to be inspected, fluctuations of the potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise measurement can be obtained without adverse effects from an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.