Invention Grant
- Patent Title: Charged particle beam apparatus and pattern measuring method
- Patent Title (中): 带电粒子束装置和图案测量方法
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Application No.: US11704227Application Date: 2007-02-09
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Publication No.: US07655907B2Publication Date: 2010-02-02
- Inventor: Sayaka Tanimoto , Hiromasa Yamanashi , Muneyuki Fukuda , Yasunari Sohda
- Applicant: Sayaka Tanimoto , Hiromasa Yamanashi , Muneyuki Fukuda , Yasunari Sohda
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Main IPC: H01J37/26
- IPC: H01J37/26

Abstract:
It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.
Public/Granted literature
- US20070272858A1 Charged particle beam apparatus and pattern measuring method Public/Granted day:2007-11-29
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