Invention Grant
- Patent Title: Infrared detector elements and methods of forming same
- Patent Title (中): 红外探测元件及其形成方法
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Application No.: US11606621Application Date: 2006-11-30
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Publication No.: US07655909B2Publication Date: 2010-02-02
- Inventor: Thomas R. Schimert , Athanasios J. Syllaios , William L. McCardel , Roland W. Gooch
- Applicant: Thomas R. Schimert , Athanasios J. Syllaios , William L. McCardel , Roland W. Gooch
- Applicant Address: US NY New York
- Assignee: L-3 Communications Corporation
- Current Assignee: L-3 Communications Corporation
- Current Assignee Address: US NY New York
- Agency: O'Keefe, Egan, Peterman & Enders LLP
- Main IPC: G01J5/00
- IPC: G01J5/00

Abstract:
Infrared detector elements and methods for forming infrared detector elements in which the top metal layer of CMOS circuitry of the detector element is employed as a lead metal reflector for the infrared detector.
Public/Granted literature
- US20070170363A1 Infrared detector elements and methods of forming same Public/Granted day:2007-07-26
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