A phase change memory device and a method of manufacturing the phase change memory device are provided. The phase change memory device may include a switching element and a storage node connected to the switching element, wherein the storage node includes a bottom electrode and a top electrode, a phase change layer interposed between the bottom electrode and the top electrode, and a titanium-tellurium (Ti—Te)-based diffusion barrier layer interposed between the top electrode and the phase change layer. The Ti—Te based diffusion barrier layer may be a TixTe1−x layer wherein x may be greater than 0 and less than 0.5.