Invention Grant
- Patent Title: Thin films transistor array panel and manufacturing method thereof
- Patent Title (中): 薄膜晶体管阵列及其制造方法
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Application No.: US11770012Application Date: 2007-06-28
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Publication No.: US07655952B2Publication Date: 2010-02-02
- Inventor: Hye-Young Ryu , Young-Hoon Yoo , Jang-Soo Kim , Sung-Man Kim , Kyung-Wook Kim , Hyang-Shik Kong , Young-Goo Song
- Applicant: Hye-Young Ryu , Young-Hoon Yoo , Jang-Soo Kim , Sung-Man Kim , Kyung-Wook Kim , Hyang-Shik Kong , Young-Goo Song
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR2003-55419 20030811; KR2003-55420 20030811
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge, placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.
Public/Granted literature
- US20080012139A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-01-17
Information query
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