Invention Grant
US07655959B2 Semiconductor light emitting device having textured structure and method of manufacturing the same 有权
具有纹理结构的半导体发光器件及其制造方法

Semiconductor light emitting device having textured structure and method of manufacturing the same
Abstract:
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.
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