Invention Grant
- Patent Title: Programmable junction field effect transistor and method for programming same
- Patent Title (中): 可编程结场效应晶体管及其编程方法
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Application No.: US11086199Application Date: 2005-03-21
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Publication No.: US07655964B1Publication Date: 2010-02-02
- Inventor: Chong Ming Lin , Ho Yuan Yu
- Applicant: Chong Ming Lin , Ho Yuan Yu
- Applicant Address: US CA Santa Clara
- Assignee: Qspeed Semiconductor Inc.
- Current Assignee: Qspeed Semiconductor Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L31/112

Abstract:
A programmable junction field effect transistor (JFET) with multiple independent gate inputs. A drain, source and a plurality of gate regions for controlling a conductive channel between the source and drain are fabricated in a semiconductor substrate. A first portion the gate regions are coupled to a first gate input and a second portion of the gate regions are coupled to a second gate input. The first and second gate inputs are electrically isolated from each other. The JFET may be programmed by applying a programming voltage to the first gate input and operated by applying a signal to the second gate input.
Information query
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