Invention Grant
- Patent Title: Semiconductor light receiving device and method of manufacturing the same
- Patent Title (中): 半导体光接收装置及其制造方法
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Application No.: US11393789Application Date: 2006-03-31
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Publication No.: US07655965B2Publication Date: 2010-02-02
- Inventor: Nobuyuki Nagashima
- Applicant: Nobuyuki Nagashima
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2005-102836 20050331
- Main IPC: H01L31/113
- IPC: H01L31/113

Abstract:
A semiconductor light receiving device includes a plurality of photodiode units, each of which is configured to convert a received light into an electric signal; and a separating unit configured to electrically separates the plurality of photodiode units from each other. The impurity concentration of a surface portion of the separating unit is equal to or lower than a first concentration. The first concentration is a concentration at which the light receiving sensitivity of the separating unit to light is substantially equal to the light receiving sensitivity of each of the plurality of photodiode units of the light. A wavelength of the light is equal to or longer than that of blue-violet light.
Public/Granted literature
- US20060220079A1 Semiconductor light receiving device and method of manufacturing the same Public/Granted day:2006-10-05
Information query
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