Invention Grant
US07655966B2 High efficiency CMOS image sensor pixel employing dynamic voltage supply
有权
采用动态电压源的高效率CMOS图像传感器像素
- Patent Title: High efficiency CMOS image sensor pixel employing dynamic voltage supply
- Patent Title (中): 采用动态电压源的高效率CMOS图像传感器像素
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Application No.: US12050967Application Date: 2008-03-19
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Publication No.: US07655966B2Publication Date: 2010-02-02
- Inventor: James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Charles F. Musante , Richard J. Rassel
- Applicant: James W. Adkisson , John J. Ellis-Monaghan , Mark D. Jaffe , Charles F. Musante , Richard J. Rassel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Anthony J. Canale
- Main IPC: H04N3/14
- IPC: H04N3/14

Abstract:
A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.
Public/Granted literature
- US20090236644A1 HIGH EFFICIENCY CMOS IMAGE SENSOR PIXEL EMPLOYING DYNAMIC VOLTAGE SUPPLY Public/Granted day:2009-09-24
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