Invention Grant
- Patent Title: Semiconductor devices
- Patent Title (中): 半导体器件
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Application No.: US11077388Application Date: 2005-03-10
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Publication No.: US07655968B2Publication Date: 2010-02-02
- Inventor: Homer M. Manning
- Applicant: Homer M. Manning
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure which supports capacitor bottom plates during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer, a capacitor top plate, and final supporting dielectric. An inventive structure is also described.
Public/Granted literature
- US20050158949A1 Semiconductor devices Public/Granted day:2005-07-21
Information query
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