Invention Grant
- Patent Title: Semiconductor device having a cylindrical capacitor
- Patent Title (中): 具有圆柱形电容器的半导体器件
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Application No.: US11431509Application Date: 2006-05-11
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Publication No.: US07655969B2Publication Date: 2010-02-02
- Inventor: Yoshihiro Takaishi
- Applicant: Yoshihiro Takaishi
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2005-140079 20050512
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A DRAM device has a stacked capacitor including a first capacitor section received in a thick insulation film and a second capacitor section overlying the first capacitor section. A portion of the bottom electrode in the second capacitor section has a thickness larger than the thickness of another portion of the bottom electrode in the first capacitor section.
Public/Granted literature
- US20060258112A1 Semiconductor device having a cylindrical capacitor Public/Granted day:2006-11-16
Information query
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