Invention Grant
US07655970B2 Single poly non-volatile memory device with inversion diffusion regions and methods for operating the same
有权
具有反向扩散区域的单多晶非易失性存储器件及其操作方法
- Patent Title: Single poly non-volatile memory device with inversion diffusion regions and methods for operating the same
- Patent Title (中): 具有反向扩散区域的单多晶非易失性存储器件及其操作方法
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Application No.: US11359028Application Date: 2006-02-22
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Publication No.: US07655970B2Publication Date: 2010-02-02
- Inventor: Ming-Chang Kuo
- Applicant: Ming-Chang Kuo
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A non-volatile memory device comprises a substrate with the dielectric layer formed thereon. A control gate and a floating gate are then formed next to each other on top of the dielectric layer separated by a gap. Accordingly, a non-volatile memory device can be constructed using a single poly process that is compatible with conventional CMOS processes. In addition, assist gates are formed on the dielectric layer next to the control gate and floating gate respectively.
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