Invention Grant
- Patent Title: Power trench transistor
- Patent Title (中): 功率沟槽晶体管
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Application No.: US11264756Application Date: 2005-10-31
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Publication No.: US07655975B2Publication Date: 2010-02-02
- Inventor: Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
- Applicant: Franz Hirler , Wolfgang Werner , Markus Zundel , Frank Pfirsch
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Maginot Moore & Beck
- Priority: DE102004052678 20041029
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.
Public/Granted literature
- US20060118864A1 Power trench transistor Public/Granted day:2006-06-08
Information query
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