Invention Grant
US07655979B2 High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor
有权
高压栅极驱动器集成电路包括高压结电容和高压LDMOS晶体管
- Patent Title: High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor
- Patent Title (中): 高压栅极驱动器集成电路包括高压结电容和高压LDMOS晶体管
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Application No.: US11950959Application Date: 2007-12-05
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Publication No.: US07655979B2Publication Date: 2010-02-02
- Inventor: Chang-Ki Jeon , Sung-Iyong Kim , Tae-hun Kwon
- Applicant: Chang-Ki Jeon , Sung-Iyong Kim , Tae-hun Kwon
- Applicant Address: KR Bucheon
- Assignee: Fairchild Korea Semiconductor, Ltd.
- Current Assignee: Fairchild Korea Semiconductor, Ltd.
- Current Assignee Address: KR Bucheon
- Agency: Hiscock & Barclay, LLP
- Agent Thomas R. FitzGerald, Esq.
- Priority: KR10-2004-0029182 20040427
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/265
Abstract:
There is provided a high voltage gate driver integrated circuit. The high voltage gate driver integrated circuit includes: a high voltage region; a junction termination region surrounding the high voltage region; a low voltage region surrounding the junction termination region; a level shift transistor disposed between the high voltage region and the low voltage region, at least some portions of the level shift transistor being overlapped with the junction termination region; and/or a high voltage junction capacitor disposed between the high voltage region and the low voltage region, at least some portions of the high voltage junction capacitor being overlapped with the junction termination region.
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