Invention Grant
- Patent Title: Systems and methods for reducing contact to gate shorts
- Patent Title (中): 减少与栅极短路的接触的系统和方法
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Application No.: US11644639Application Date: 2006-12-21
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Publication No.: US07655986B2Publication Date: 2010-02-02
- Inventor: Nadia Rahhal-Orabi
- Applicant: Nadia Rahhal-Orabi
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A method for reducing contact to gate shorts in a semiconductor device and the resulting semiconductor device are described. In one embodiment, a gate is formed on a substrate, a contact is formed on the gate and the substrate, and an insulator is formed between the gate and the contact. The insulator may be formed by oxidizing the gate to form a dielectric between the contact and the gate after the contact is formed on the gate.
Public/Granted literature
- US20080150049A1 Systems and methods for reducing contact to gate shorts Public/Granted day:2008-06-26
Information query
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