Invention Grant
- Patent Title: Voltage-clipping device with high breakdown voltage
- Patent Title (中): 具有高击穿电压的钳位装置
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Application No.: US11424530Application Date: 2006-06-15
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Publication No.: US07655990B2Publication Date: 2010-02-02
- Inventor: Chiu-Chih Chiang , Chih-Feng Huang , You-Kuo Wu , Long Shih Lin
- Applicant: Chiu-Chih Chiang , Chih-Feng Huang , You-Kuo Wu , Long Shih Lin
- Applicant Address: TW Taipei Hsien
- Assignee: System General Corp.
- Current Assignee: System General Corp.
- Current Assignee Address: TW Taipei Hsien
- Agency: Jianq Chyun IP Office
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
The present invention proposes a voltage-clipping device utilizing a pinch-off mechanism formed by two depletion boundaries. A clipping voltage of the voltage-clipping device can be adjusted in response to a gate voltage; a gap of a quasi-linked well; and a doping concentration and a depth of the quasi-linked well and a well with complementary doping polarity to the quasi-linked well. The voltage-clipping device can be integrated within a semiconductor device as a voltage stepping down device in a tiny size, compared to traditional transformers.
Public/Granted literature
- US20070290276A1 VOLTAGE-CLIPPING DEVICE WITH HIGH BREAKDOWN VOLTAGE Public/Granted day:2007-12-20
Information query
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