Invention Grant
- Patent Title: High density photodiodes
- Patent Title (中): 高密度光电二极管
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Application No.: US11532191Application Date: 2006-09-15
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Publication No.: US07655999B2Publication Date: 2010-02-02
- Inventor: Peter Steven Bui , Narayan Dass Taneja
- Applicant: Peter Steven Bui , Narayan Dass Taneja
- Applicant Address: US CA Hawthorne
- Assignee: UDT Sensors, Inc.
- Current Assignee: UDT Sensors, Inc.
- Current Assignee Address: US CA Hawthorne
- Agency: Patentmetrix
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.
Public/Granted literature
- US20080067622A1 HIGH DENSITY PHOTODIODES Public/Granted day:2008-03-20
Information query
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