Invention Grant
US07656001B2 Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
有权
前端照明,背面接触双面PN结光电二极管阵列
- Patent Title: Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
- Patent Title (中): 前端照明,背面接触双面PN结光电二极管阵列
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Application No.: US11555367Application Date: 2006-11-01
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Publication No.: US07656001B2Publication Date: 2010-02-02
- Inventor: Peter Steven Bui , Narayan Dass Taneja
- Applicant: Peter Steven Bui , Narayan Dass Taneja
- Applicant Address: US CA Hawthorne
- Assignee: UDT Sensors, Inc.
- Current Assignee: UDT Sensors, Inc.
- Current Assignee Address: US CA Hawthorne
- Agency: PatentMetrix
- Main IPC: H01L31/06
- IPC: H01L31/06

Abstract:
The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present invention is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present invention is a photodiode array having PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.
Public/Granted literature
- US20080099871A1 FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT DOUBLE-SIDED PN-JUNCTION PHOTODIODE ARRAYS Public/Granted day:2008-05-01
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