Invention Grant
- Patent Title: Integrated bipolar transistor and field effect transistor
- Patent Title (中): 集成双极晶体管和场效应晶体管
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Application No.: US11947840Application Date: 2007-11-30
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Publication No.: US07656002B1Publication Date: 2010-02-02
- Inventor: Curtis A. Barratt , Michael T. Fresina , Brian G. Moser , Dain C. Miller , Walter A. Wohlmuth
- Applicant: Curtis A. Barratt , Michael T. Fresina , Brian G. Moser , Dain C. Miller , Walter A. Wohlmuth
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L31/058
- IPC: H01L31/058 ; H01L21/8238
Abstract:
The present invention relates to a microelectronic device having a bipolar epitaxial structure that provides at least one bipolar transistor element formed over at least one field effect transistor (FET) epitaxial structure that provides at least one FET element. The epitaxial structures are separated with at least one separation layer. Additional embodiments of the present invention may use different epitaxial layers, epitaxial sub-layers, metallization layers, isolation layers, layer materials, doping materials, isolation materials, implant materials, or any combination thereof.
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