Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11779801Application Date: 2007-07-18
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Publication No.: US07656014B2Publication Date: 2010-02-02
- Inventor: Yoshiyuki Tanigawa , Tamaki Wada
- Applicant: Yoshiyuki Tanigawa , Tamaki Wada
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2004-316026 20041029
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A process yield of a semiconductor device is enhanced. To that end, there is provided a semiconductor device comprising a substrate having a component mount face with semiconductor chips mounted thereon, the substrate being provided with a plurality of connection leads, and a cap made of resin, placed over the component mount face of the substrate so as to cover the same, the a cap having a first body part, and a second body part larger in thickness than the first body part. Because product information in the form of inscriptions is engraved on the top surface side of the second body part of the cap, the product information can be displayed without the use of an ink mark, it is possible to prevent occurrence of marking defects due to ink bleed, and so forth, thereby enhancing the process yield of a memory card (the semiconductor device).
Public/Granted literature
- US20070257346A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2007-11-08
Information query
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