Invention Grant
- Patent Title: Power semiconductor device
- Patent Title (中): 功率半导体器件
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Application No.: US11295442Application Date: 2005-12-07
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Publication No.: US07656016B2Publication Date: 2010-02-02
- Inventor: Naoki Yoshimatsu , Takanobu Yoshida , Toshiaki Shinohara
- Applicant: Naoki Yoshimatsu , Takanobu Yoshida , Toshiaki Shinohara
- Applicant Address: JP Chiyoda-Ku, Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Chiyoda-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2004-354826 20041208; JP2005-300261 20051014
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.
Public/Granted literature
- US20060119512A1 Power semiconductor device Public/Granted day:2006-06-08
Information query
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