Invention Grant
- Patent Title: Packaging conductive structure for a semiconductor substrate having a metallic layer
- Patent Title (中): 包含具有金属层的半导体衬底的导电结构
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Application No.: US11822113Application Date: 2007-07-02
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Publication No.: US07656020B2Publication Date: 2010-02-02
- Inventor: Cheng Tang Huang
- Applicant: Cheng Tang Huang
- Applicant Address: TW Hsinchu
- Assignee: Chipmos Technologies, Inc.
- Current Assignee: Chipmos Technologies, Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW96106246A 20070216
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L23/495

Abstract:
A packaging conductive structure for a semiconductor substrate and a method for forming the structure are provided. The dielectric layer of the packaging conductive structure partially overlays the metallic layer of the semiconductor substrate and has a receiving space. The lifting layer and conductive layer are formed in the receiving space, wherein the conductive layer extends for connection to a bump. The lifting layer is partially connected to the dielectric layer. As a result, the conductive layer can be stably deposited on the edge of the dielectric layer for enhancing the reliability of the packaging conductive structure.
Public/Granted literature
- US20080197475A1 Packaging conductive structure and method for forming the same Public/Granted day:2008-08-21
Information query
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