Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12168438Application Date: 2008-07-07
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Publication No.: US07656026B2Publication Date: 2010-02-02
- Inventor: Yoshiharu Ogata , Yoshikatsu Soma , Hiroharu Kondo , Munehide Saimen
- Applicant: Yoshiharu Ogata , Yoshikatsu Soma , Hiroharu Kondo , Munehide Saimen
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2007-186838 20070718
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
A semiconductor device, includes: a wiring substrate having a wiring pattern on a front surface thereof; a first semiconductor chip mounted on the front surface of the wiring substrate; a first heat radiator having a first recess housing the first semiconductor chip and making contact with the front surface of the wiring substrate and the first semiconductor chip directly or with a first insulation layer; a second heat radiator making contact with a rear surface of the wiring substrate directly or with a second insulation layer; and a first fixing member passing through the first heat radiator, the wiring substrate, and the second heat radiator, and pressing the first heat radiator and the second heat radiator to the wiring substrate.
Public/Granted literature
- US20090020867A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-01-22
Information query
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