Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11652235Application Date: 2007-01-10
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Publication No.: US07656030B2Publication Date: 2010-02-02
- Inventor: Yasuo Osone , Kenya Kawano , Chiko Yorita , Yu Hasegawa , Yuji Shirai , Naotaka Tanaka , Seiichi Tomoi , Hiroshi Okabe
- Applicant: Yasuo Osone , Kenya Kawano , Chiko Yorita , Yu Hasegawa , Yuji Shirai , Naotaka Tanaka , Seiichi Tomoi , Hiroshi Okabe
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Townsend and Townsend and Crew LLP
- Priority: JP2006-003195 20060111
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/48
Abstract:
Heating elements different in heat generating timing are laminated in a stacked state, and the heating element close to a wiring substrate is allowed to function as a heat diffusion plate for another heating element.
Public/Granted literature
- US20070176298A1 Semiconductor device Public/Granted day:2007-08-02
Information query
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