Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12208718Application Date: 2008-09-11
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Publication No.: US07656034B2Publication Date: 2010-02-02
- Inventor: Tomohiro Iguchi , Hideo Nishiuchi , Kazuhito Higuchi , Tomoyuki Kitani
- Applicant: Tomohiro Iguchi , Hideo Nishiuchi , Kazuhito Higuchi , Tomoyuki Kitani
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-239558 20070914
- Main IPC: H01L21/60
- IPC: H01L21/60
Abstract:
A semiconductor device includes a semiconductor element, a lead, and a gold wire electrically connecting an electrode of the semiconductor element and the lead. In the semiconductor device, the gold wire is covered with a metal and is a continuous film formed by plating.
Public/Granted literature
- US20090072395A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-03-19
Information query
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