Invention Grant
- Patent Title: Cap layer for an aluminum copper bond pad
- Patent Title (中): 用于铝铜键合垫的盖层
-
Application No.: US11360336Application Date: 2006-02-23
-
Publication No.: US07656045B2Publication Date: 2010-02-02
- Inventor: Chu-Chung Lee , Kevin J. Hess
- Applicant: Chu-Chung Lee , Kevin J. Hess
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Robert L. King; David G. Dolezal
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/44 ; H01L21/4763

Abstract:
A bond pad for an electronic device such as an integrated circuit makes electrical connection to an underlying device via an interconnect layer. The bond pad has a first layer of a material that is aluminum and copper and a second layer, over the first layer, of a second material that is aluminum and is essentially free of copper. The second layer functions as a cap to the first layer for preventing copper in the first layer from being corroded by residual chemical elements. A wire such as a gold wire may be bonded to the second layer of the bond pad.
Public/Granted literature
- US20070194460A1 Cap layer for an aluminum copper bond pad Public/Granted day:2007-08-23
Information query
IPC分类: