Invention Grant
US07656233B2 Apparatus for high power amplifier in wireless communication system
有权
无线通信系统中大功率放大器的装置
- Patent Title: Apparatus for high power amplifier in wireless communication system
- Patent Title (中): 无线通信系统中大功率放大器的装置
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Application No.: US12019779Application Date: 2008-01-25
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Publication No.: US07656233B2Publication Date: 2010-02-02
- Inventor: Jong-Hyun Lee
- Applicant: Jong-Hyun Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Jefferson IP Law, LLP
- Priority: KR10-2007-0010599 20070201
- Main IPC: H03F3/04
- IPC: H03F3/04

Abstract:
An apparatus for a High Power Amplifier (HPA) in a wireless communication system is provided. In one example, the apparatus includes a temperature sensor for determining temperature, a controller for receiving the determined temperature and for controlling a gate bias voltage corresponding to the determined temperature and an amplifier for amplifying a Radio Frequency (RF) signal by using the controlled gate bias voltage.
Public/Granted literature
- US20080186094A1 APPARATUS FOR HIGH POWER AMPLIFIER IN WIRELESS COMMUNICATION SYSTEM Public/Granted day:2008-08-07
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