Invention Grant
- Patent Title: Method and apparatus for evaluating semiconductor layers
- Patent Title (中): 用于评估半导体层的方法和装置
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Application No.: US11486271Application Date: 2006-07-14
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Publication No.: US07656514B2Publication Date: 2010-02-02
- Inventor: Hideo Takeuchi , Yoshitsugu Yamamoto
- Applicant: Hideo Takeuchi , Yoshitsugu Yamamoto
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2005-218329 20050728
- Main IPC: G01N21/00
- IPC: G01N21/00
Abstract:
A method for evaluating semiconductor layers includes irradiating semiconductor layers on a substrate with light; measuring an optical spectrum peculiar to excitons in the semiconductor layers; and analyzing a broadening factor of optical spectral features of the optical spectrum. The method provides a quick measurement of a surface state of the semiconductor layers with high accuracy.
Public/Granted literature
- US20070026594A1 Method and apparatus for evaluating semiconductor layers Public/Granted day:2007-02-01
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