Invention Grant
- Patent Title: Pattern inspection apparatus
- Patent Title (中): 图案检验仪
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Application No.: US11781727Application Date: 2007-07-23
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Publication No.: US07656516B2Publication Date: 2010-02-02
- Inventor: Shinichi Imai
- Applicant: Shinichi Imai
- Applicant Address: JP Kawasaki-shi
- Assignee: Advanced Mask Inspection Technology Inc.
- Current Assignee: Advanced Mask Inspection Technology Inc.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-271306 20050920
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
A pattern inspection apparatus is disclosed, which includes a first laser light source for emission of first laser light having a first wavelength, a second laser light source for emission of second laser light having a second wavelength, and a deep ultraviolet (DUV) light source for emission of DUV light with a wavelength of less than or equal to 266 nm based on the first laser light and the second laser light. A first optical fiber is provided for connecting between the first laser light source and the DUV light source. A second optical fiber is for connection between the second laser light source and the DUV light source. The apparatus also includes a pattern inspection unit with the DUV light source being built therein, for inspecting a workpiece pattern being tested by using the DUV light as illumination light therefore.
Public/Granted literature
- US20080013072A1 PATTERN INSPECTION APPARATUS Public/Granted day:2008-01-17
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