Invention Grant
US07656621B2 Magneto-resistive element having a cap layer for canceling spin injection effect
有权
具有用于消除自旋注入效果的盖层的磁阻元件
- Patent Title: Magneto-resistive element having a cap layer for canceling spin injection effect
- Patent Title (中): 具有用于消除自旋注入效果的盖层的磁阻元件
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Application No.: US11581478Application Date: 2006-10-17
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Publication No.: US07656621B2Publication Date: 2010-02-02
- Inventor: Koji Shimazawa , Daisuke Miyauchi , Tomohito Mizuno , Yoshihiro Tsuchiya
- Applicant: Koji Shimazawa , Daisuke Miyauchi , Tomohito Mizuno , Yoshihiro Tsuchiya
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-301580 20051017
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/127

Abstract:
A magneto-resistive element has: a first stacked film assembly having a pinned layer, a spacer layer, and a free layer; a first electrode layer which is arranged such that the first layer is in contact with the first electrode layer on the other side of the first layer, the first electrode layer being made of a ferromagnetic material; and a second electrode layer which is arranged on a side that is opposite to the first electrode layer with regard to the first stacked film assembly. The first and second electrode layers are adapted to apply a sense current to the first stacked film assembly and the first layer in a direction that is perpendicular to layer surfaces. The first layer is made of gold, silver, copper, ruthenium, rhodium, iridium, chromium or platinum, or an alloy thereof.
Public/Granted literature
- US20070086120A1 Magneto-resistive element having a cap layer for canceling spin injection effect Public/Granted day:2007-04-19
Information query
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