Invention Grant
- Patent Title: Tunnel magnetoresistance device with tunnel barrier layer containing residual carbon
- Patent Title (中): 具有隧道势垒层的隧道磁阻器件含有残留碳
-
Application No.: US11100616Application Date: 2005-04-07
-
Publication No.: US07656622B2Publication Date: 2010-02-02
- Inventor: Ryonosuke Tera , Inao Toyoda , Yasutoshi Suzuki
- Applicant: Ryonosuke Tera , Inao Toyoda , Yasutoshi Suzuki
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2004-114243 20040408
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
The TMR device has a structure including a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer, and an upper electrode layer which are successively formed on a substrate. The tunnel barrier layer has substantially a stoichiometric composition. The tunnel barrier layer may be a thin film of an oxide of AL formed by ALD method.
Public/Granted literature
- US20050225905A1 Tunnel magnetoresistance device Public/Granted day:2005-10-13
Information query
IPC分类:
