Invention Grant
- Patent Title: NAND step up voltage switching method
- Patent Title (中): NAND升压电压切换方式
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Application No.: US11800002Application Date: 2007-05-03
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Publication No.: US07656709B2Publication Date: 2010-02-02
- Inventor: Akira Goda , Taehoon Kim , Doyle Rivers , Roger Porter
- Applicant: Akira Goda , Taehoon Kim , Doyle Rivers , Roger Porter
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow threshold voltage situations and programming at a larger Vstep increment where faster programming is desired.
Public/Granted literature
- US20080273385A1 NAND step up voltage switching method Public/Granted day:2008-11-06
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