Invention Grant
US07656717B2 Memory device having latch for charging or discharging data input/output line
有权
具有用于对数据输入/输出线进行充电或放电的锁存器的存储器件
- Patent Title: Memory device having latch for charging or discharging data input/output line
- Patent Title (中): 具有用于对数据输入/输出线进行充电或放电的锁存器的存储器件
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Application No.: US11477529Application Date: 2006-06-30
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Publication No.: US07656717B2Publication Date: 2010-02-02
- Inventor: Sang-Jin Byeon , Beom-Ju Shin
- Applicant: Sang-Jin Byeon , Beom-Ju Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2005-0091566 20050929; KR10-2005-0132577 20051228
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A semiconductor memory device of the claimed invention, having an active state for performing a read or write operation and an inactive state except for the active state includes a data input/output (I/O) line; a pull-up latch unit for pulling-up the data I/O line when the semiconductor memory device is in the inactive state; a pull-down latch unit for pulling-down the data I/O line when the semiconductor memory device is in the inactive state; and a selection unit for selectively driving one of the pull-up latch unit and the pull-down latch unit.
Public/Granted literature
- US20070070774A1 Memory device having latch for charging or discharging data input/output line Public/Granted day:2007-03-29
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