Invention Grant
US07656718B2 Semiconductor device having output buffer initialization circuit and output buffer initialization method
有权
半导体器件具有输出缓冲器初始化电路和输出缓冲器初始化方法
- Patent Title: Semiconductor device having output buffer initialization circuit and output buffer initialization method
- Patent Title (中): 半导体器件具有输出缓冲器初始化电路和输出缓冲器初始化方法
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Application No.: US11747041Application Date: 2007-05-10
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Publication No.: US07656718B2Publication Date: 2010-02-02
- Inventor: Yong-Gwon Jeong
- Applicant: Yong-Gwon Jeong
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2006-0066933 20060718
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A semiconductor device has at least two semiconductor memory devices, each of which includes a memory cell array arranged in a matrix of rows and columns, a peripheral circuit writing data to a cell of the memory cell array and reading out and amplifying the written data, and an output buffer outputting cell data amplified by the peripheral circuit. The output buffer includes an output buffer initialization circuit activating an output buffer reset signal in response to the power up or power down of the semiconductor memory device and deactivating the output buffer reset signal in response to a first command signal output from a controller of the semiconductor memory device, and an output driver generating output data based on a data signal in response to a clock signal, a data enable signal, and the output buffer reset signal.
Public/Granted literature
- US20080037334A1 SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER INITIALIZATION CIRCUIT AND OUTPUT BUFFER INITIALIZATION METHOD Public/Granted day:2008-02-14
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