Invention Grant
- Patent Title: Semi-shared sense amplifier and global read line architecture
- Patent Title (中): 半共享读出放大器和全局读取行架构
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Application No.: US11694022Application Date: 2007-03-30
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Publication No.: US07656731B2Publication Date: 2010-02-02
- Inventor: Chang Ho Jung , Zhiqin Chen
- Applicant: Chang Ho Jung , Zhiqin Chen
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM, Incorporated
- Current Assignee: QUALCOMM, Incorporated
- Current Assignee Address: US CA San Diego
- Agent Howard Seo; William M. Hooks
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A memory includes a global read line and a plurality of banks. For each bank, the memory includes a sense amplifier. A discharge circuit discharges the global read line if any one of a plurality of the sense amplifiers is enabled and is outputting a signal having a first digital logic value onto an input lead of the discharge circuit. In this way, the sense amplifiers share the discharge circuit. In one example, the memory includes a pair of differential read lines that are precharged to begin a read operation. After precharging, if either of two sense amplifiers is enabled and outputting the first digital logic value, then a first discharge circuit discharges a first of the global read lines. If either of two sense amplifiers is enabled and outputting the second digital logic value, then a second discharge circuit discharges a second of the global read lines.
Public/Granted literature
- US20080239847A1 SEMI-SHARED SENSE AMPLIFIER AND GLOBAL READ LINE ARCHITECTURE Public/Granted day:2008-10-02
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