Invention Grant
- Patent Title: Dual voltage flash memory methods
- Patent Title (中): 双电压闪存方式
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Application No.: US11537214Application Date: 2006-09-29
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Publication No.: US07656735B2Publication Date: 2010-02-02
- Inventor: Yishai Kagan , Michael James McCarthy
- Applicant: Yishai Kagan , Michael James McCarthy
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Jenkins, Wilson, Taylor & Hunt, P.A.
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A voltage regulation circuit in a nonvolatile memory card accepts an input voltage from a host at two or more different voltage levels and provides an output voltage at a single level to components including a memory die. The voltage regulation circuit can provide an output voltage that is higher or lower than the input voltage.
Public/Granted literature
- US20080080254A1 Dual Voltage Flash Memory Methods Public/Granted day:2008-04-03
Information query
